Welcome to Professor Akbar Adibi's Publication Page. Here you may find Professor's
selected Conference and Journal Papers and also his published books.
PAPERS
- A Novel Implementation of the Hebbian Neurons by Subthreshold
MOSFETs in the Presence of Mobile Ions
- A Proposed Classical Electron Path in Quantum
Devices
- A Modern Signature Analysis Using Fuzzy Logic and
Neural Network
- Electron Transport in Submicron Semiconductor
Devices.
- Fast Progresses in Semiconductor Technology and
Their Effects on Microprocessor Design and Development.
- Controllable Reflectivity in time domain using
nonlinear optics
- Nonclassical Properties of Optical Parametric
Interaction Hamiltonian
- A Collection velocity Model for predicting the
efficiency of Schottky barrier solar cells
- A Comprehensive digital protection method in high
voltage power systems
- Macroscopic Method for Generation of Squeezed Light
in Nonlinear Optical Fibers
- A new approach to Gallium Arsenide system design
- Photonic Interpretation for Analyzing - Mesoscopic
Devices
- A new algorithm for characterization of a P-N
junction diode
- Simulation & design of Organic quantum film of
optical switch
- Fast progresses in Integrated circuit design &
fabrication and corresponding improvements of Microprocessors design &
development
- A reduced hardware general purpose systolic array
design
- High speed & high precision Digital relays in
high voltage power systems
- High speed learning of neural network using fuzzy
logic
- Photonic treatment of refraction angle in submicron
optoelectronic devices
- Flicker noise modeling in GaAs MESFET and its
application to phase noise reduction
- Pulse Narrowing in Nonlinear Optical Systems and
QWMS
- Nonclassical properties of linear combination of
coherent states in nonlinear optical fibers
- Semiconductor device simulation by a new method of
solving Poisson, Laplace & Schrödinger equation
- A Markov model for FET & eliminating 1/f noise
using Kalman filter
- FWM & Quarter Wave multilayer Stack
- Squeezed light generation by SHG
- Photonic treatment
- Optical parametric interaction & squeezed light
generation
- Phase conjugational quarter wave reflectors
- Software lab for semiconductor device
characterization
- Organic quantum film optical switch
- Solution of quantized optical parametric
interactions Hamiltonian
- Dependence of nonclassical behavior of OPI
Hamiltonian on the strength of coherence of initial light
- A New method for quantum device simulation
- Photonic Treatment, An Authentic concept
- Generalized model for GaAs MESFET Photodetectors
PAPER ABSTRACTS:
1- A Novel
Implementation of the Hebbian Neurons by Subthreshold MOSFETs in the Presence
of Mobile Ions
Abstract:
The 7th Iranian Conference on Electrical
Engineering, 17-19 May 1999, Tehran Iran. In this paper we present a novel implementation of a
neuron which, actually mimics the behavior of the biological neurons instead of
conventional models of a neuron. We first investigate the characteristics of a
subthreshold MOSFET in the presence of alkali ion. Alkali ions can move in the
gate oxide and cause variation in the threshold voltage and stability in the
performance of conventional digital and analogue circuits. According to the Hebbian
learning rule, we will use this apparently lamentable property for
automatically changing the weights of the synapses. Finally we will propose a
novel neuron and investigate this performance.
2- A Proposed Classical
Electron Path in Quantum Devices
Abstract:
The 7th Iranian Conference on Electrical
Engineering, 17-19 May 1999, Tehran Iran. From uncertainty principle, we know that we can not
define a precise path for a quantum particle, such as an electron. However, in
spite of the above fact, we need some physical feeling inside the quantum
devices, which means, one has to obtain some classical understanding of events occurring
inside the devices. In this paper, our goal would be to introduce a classical
path for electron in quantum devices with the aid of velocity estimation of
electron as a function of space, which would finally lead to a classical path
with the properties of electron density and current calculations satisfactorily
equal to quantum density and current for electron.
3- A Modern Signature
Analysis Using Fuzzy Logic and Neural Network
Abstract:
ICT 96 International Conference on
Telecommunications, 14-17 April 1996, Istanbul- Turkey Many different methods
have been introduced in pattern recognition so far which can be classified in
three major categories: (i) classical neural network (ii) fuzzy logic approach
Classical methods including complex statistical algorithms or pure mathematical
relations are not sufficiently flexible, on the other hand, neural nets or
fuzzy logics based methods, which are flexible approaches possess their own
shortcomings. We combined both neural nets and fuzzy logics based criteria to
create a robust tool for pattern recognition. In this sense, an intelligent
fuzzy system recognizes the bulk of the patterns first and a neural network
performs the detailed recognition later. In the first step, the outlook of the
patterns are only compared by the fuzzy system which is a low precision
process, whereas the neural network has to compare the corresponding parts of
the patterns in the second step precisely. Our new approach has been successfully
applied to recognize signature patterns with satisfactory results which are
figured out later in this paper.
4- Electron Transport in
Submicron Semiconductor Devices.
Abstract:
A. Adibi M. J. Sharifi ICEE'98 (Iranian
Conference on Electrical engineering) 1998, Tehran Iran. In this
paper, we have studied the electron transport in submicron semiconductor
devices. The average electron velocity and energy in the device and the rules
of different scattering mechanism as the function of device length have been
considered. In this study we have found out that the effect of the impurity
scattering in short devices will be much more pronounced than the long devices
and also it will be possible for electron to reach to a velocity above the ballistic
velocity in short devices.
5- Fast Progresses in
Semiconductor Technology and Their Effects on Microprocessor Design and Developement.
Abstract:
A. Adibi ,Amirkabir journal of Technology,
No.14, 1987, Tehran Iran The construction of microprocessors containing thousands
MOS transistors on a single chip is indeed a fact of fast and deep progresses
and developments of integrated circuits. In view of these development,
microprocessors have been crucially affected in both the design and
implementation aspect as well. As an example it took less than 10 years to
reach microprocessors from 4 bits to 8 and 16 bits. The capability of
minicomputers will be obtainable using 32 and 64 bit processors. In this paper
we have shown the correspondence between IC progresses and the relevant
microprocessor parameters affected in the design and implementation.
6- Controllable Reflectivity
in time domain using nonlinear optics
Abstract:
A. Adibi H. Kaatuzian A. Rostami S. Asrari
ICEE'98 (Iranian Conference on Electrical engineering) 1998, Tehran Iran. In this
paper we have proposed a new method based on Quarter Wave Multilayer Stack for
interpretation of Pulse Narrowing in Nonlinear Optical Systems. In this method
we have found that the physical behavior of Dynamic Bragg Filters could be used
to describe successfully Pulse Narrowing.
7- Nonclassical Properties of
Optical Parametric Interaction Hamiltonian
Abstract:
Akbar Adibi A. Rostami ICEE'98 (Iranian
Conference on Electrical engineering) 1998, Tehran Iran. An
approach for generation and amplification of squeezed light in optical
parametric interaction (OPI) in developed. Coherent state as an initial
condition is applied to OPI systems and we show that our proposed approach is
very suitable for new computer simulation of this kind. In this paper we have
discussed the model properties and have presented the time development of
phenomenon in Schrödinger picture. Also, squeezed properties for combined field
are derived.
8- A Collection velocity Model
for predicting the efficiency of Schottky barrier solar cells
Abstract:
ORDUNG, P. F., ADIBI, A, HEALD, D., &
SKALNIK, J.: 'A Collection velocity Model for predicting the efficiency of
Schottky barrier solar cells', International Conference on Electricity by means
of solar cells, 1977, Luxembourg.
9- A Comprehensive digital
protection method in high voltage power systems
Abstract:
ADIBI, A. AGHAJANI, A. & RIAHI, GH.: 'A
Comprehensive digital protection method in high voltage power systems',, IEEE
Midwest symposium on circuits & systems, 16-18 August 1993, Dettroit
Michigan.
10- Macroscopic Method for
Generation of Squeezed Light in Nonlinear Optical Fibers
Abstract:
A. Rostami A. Adibi The 7th Iranian
Conference on Electrical Engineering, 17-19 May 1999, Tehran Iran. Optical
properties of submicron systems are hardly affected from quantum mechanical
theory. Furthermore optical integrated circuits are also to be considered in
quantum mechanical domain specially optical fibers or waveguides of which we
have studied the nonclassical optical properties of linear combination of
fields. In this paper we will propose the linear combinations of coherent
states (Laser beams) which are applicable in microscopic scale for generation
of squeezed light. Also we have tackled the most probable quantum noise problem
encountered in OICs. The proposed method will result in a minimum quantum noise
level less than the standard quantum limit.
11- A new approach to Gallium
Arsenide system design
Abstract:
K. Eshraghian M.L. Paltridge W.S. Blackley
D.W. Griffin B.R. Davis A. Adibi. 7th Australian Microelectronics
Conference, May 16-18, 1988, Sydney University, NSW Key physical properties of gallium arsenide will
lead to ultimate physical performance limits some five times better than
silicon based technologies of equivalent geometrical dimensions. This paper
considers aspects of the system design of digital gallium arsenide products,
reviews some aspects of fabrication of interest to the CAD tool designer, and
looks at some results for layout simplification to aid the system
designer.
12- Photonic Interpretation
for Analyzing - Mesoscopic Devices
Abstract:
Akbar Adibi Hassan Kaatuzian ICT'96 13-17
April, 1996, Istanbul Turkey In this paper we'll consider the physical phenomena in
mesoscopic scales. Our physical model which is called 'Photonic' is based on
particle nature of light. We've successfully used this treatment to interpret
some wave like properties of light. In Cambridge illustrated history of world's science, we read that physics
at 18'th century believed light as a stream of particles. In 19'th century they
believed it as wave and in 20'th as Wave-Particle Duality. It seems in 21'st
century there will be Wave-Particle Unification!
13- A new algorithm for characterisation
of a P-N junction diode
Abstract:
ADIBI, A. & Sharifi, M. J.: 'Anew
algorithm for characterization of a P-N junction diode', Amirkabir Journal of
Technology, No. 27,1995, Tehran Iran.
14- Simulation & design of
Organic quantum film of optical switch
Abstract:
ADIBI, A. & KAATUZIAN, H.: 'Simulation
& design of Organic quantum film of optical switch.', International Journal
of Engineering, fall 1995, Tehran Iran.
15- Fast progresses in
Integrated circuit design & fabrication and corresponding improvements of
Microprocessors design & development
Abstract:
ADIBI, A.: Fast progresses in Integrated
circuit design & fabrication and corresponding improvements of
Microprocessors design & development, Amirkabir journal of Technology,
No.14, 1987, Tehran Iran.
16- A reduced hardware general
purpose systolic array design
Abstract:
ADIBI, A. & BONAKDAR, H.: 'A reduced
hardware general purpose systolic array design', IEEE Midwest symposium on
circuit & systems, 3-5 August 1994 Lafayette Louisiana.
17- High speed & high
precision Digital relays in high voltage power systems
Abstract:
A. Adibi A. Aghajani G. H. Riahi Published
in Proceeding of the 35th Midwest Symposium on Circuits and Systems, August 9-12, 1992
Washington, D.C. The probability of fault occurrence and power failures
are common in power systems. To prevent damages in accordance with the failure,
a fast and reliable protection system is needed in order to initiate proper
commands to the actuators in proper time. Since the high voltage power equipments
are very expensive, they must be reliably protected against the failures and
the protection system must respond as fast as possible. The higher the voltage,
the worse the damages and therefore more sophisticated protective relays are of
great importance. Our first model based on Linear Prediction (LP) method has
been successfully applied to a 400 KV network with satisfactory results. The
method will be briefly discussed in this paper for convenience.
18- High speed learning of
neural network using fuzzy logic
Abstract:
ADIBI, A., SALEHI, M., HESHMATPANAH, J.,
BANIARDALANI, S. & FIROOZSHAHI, A.: 'High speed learning of neural network
using fuzzy logic', IEEE Midwest symposium on circuit & systems, 16-18 1993
Detroit Michigan.
19- Photonic treatment of
refraction angle in submicron optoelectronic devices
Abstract:
ADIBI, A. & KAATUZIAN, K.: 'Photonic
treatment of refraction angle in submicron optoelectronic devices', Amirkabir
Journal of Technology, No. 27, 1995, Tehran Iran.
20- Flicker noise modeling in
GaAs MESFET and its application to phase noise reduction
Abstract:
ADIBI, A. BOOZARY, H. & NAJAFI AGHDAM,
E.: 'Flicker noise modeling in GaAs MESFET and its application to phase noise
reduction', ICT'95, April 1995, Bali Indonesia.
21- Pulse Narrowing in
Nonlinear Optical Systems and QWMS
Abstract:
A. Adibi A. Rostami S. Asrari Proceeding of
ICT'98 Conference on Telecommunications, 1998, Greece. In
this paper we have proposed a new method based on Quarter Wave Multilayer Stack
for interpretation of Pulse Narrowing in Nonlinear Optical Systems. In this
method we have found that the physical behavior of Dynamic Bragg Filters could
be used to describe successfully Pulse Narrowing.
22- Nonclassical properties of
linear combination of coherent states in nonlinear optical fibers
Abstract:
Akbar Adibi A. Rostami Proceeding of ICT'98
Conference on Telecommunications, 1998, Greece. Optical properties of submicron systems are hardly
affected from quantum mechanical theory. Furthermore optical integrated
circuits have also been considered in quantum mechanical domain specially
optical fibers or waveguides of which we have studied the nonclassical optical
properties of linear combinations of fields. in this paper we have also tackled
the most probable quantum noise problem encountered in OIC's. The proposed
method will result in a minimum quantum noise level less than the standard
quantum limit.
23- Semiconductor device
simulation by a new method of solving Poisson, Laplace & Schrödinger
equation
Abstract:
Akbar Adibi A. Rostami International Journal
of Engineering, Summer 1999, Tehran Iran. In this paper we have extended and completed our
previous work; introducing a new method for finite differentiation. We show a
method for solving a wide variety of equations like Poisson, Laplace and Schrödinger
equations. These equations are really the heart of most semiconductor device
simulators. In a section we solve the Schrödinger equation in several cases,
including the problem of finding electron concentration profile in the channel
of a HEMT. In another section we solve Poisson equation by this method,
choosing the problem of SBD as an example. Finally we solve the Laplace
equation in two dimensions, and as an example we focus on the VED. In this
paper, we have shown that the method can result in solving all these problems
very stably and precisely and also the programs which have used this method
become considerably faster, more clear and more abstracted.
24- A Marcov model for FET
& eliminating 1/f noise using Kalman filter
Abstract:
M. J. Sharifi A. Adibi IASTED Conference,
MIC-98, Switzerland 1998 This paper addresses the low frequency problem in
electron device measurements. We introduce, for the first time, a Markov model
for FETs and apply a Kalman filter to the model. We have obtained very
successful results by solving this model.
25- FWM & Quarter Wave
multilayer Stack
Abstract:
ADIBI, A. KAATUZIAN, H. & ROSTAMI, A.:
'FWM & Quarter Wave multilayer Stack', ICT97, 1997, Australia.
26- Squeezed light generation
by SHG
Abstract:
ADIBI, A. KAATUZIAN, K. & Rostami, A.:
'Squeezed light generation by SHG', ICT'97, 1997, Australia.
27- Photonic treatment
Abstract:
A. Adibi H. Kaatuzian Optoelectronics,
Devices and Technologies, Vol. 10, No. 3, pp. 421, September 1995 In this paper
we'll consider the physical phenomena in submicron optical devices. Our
physical model is based on the particle nature of light and is called Photonics
to estimate the critical angle at the interface between two dielectric media.
We haven't used either Electromagnetic theory or Stokes treatment. This is
because none of these theories can explain the microscopic phenomena in
submicron dimensions or in atomic scales. The treatment is called 'Photonics',
because photon particles strikes at the interface region of a crystal with a
specified lattice structure and interact step by step with the electrons of
atomic layers at the interface. For verification of the model we have used the
'Monte Carlo' method and the results of simulation have confirmed the
validity of the Photonics approach to estimate the critical angel in the
refraction phenomenon.
28- Optical parametric
interaction & squeezed light generation
Abstract:
A. Adibi A. Rostami Proceeding of ICT'98
Conference on Telecommunications, 1998, Greece. An approach for generation and amplification of
squeezed light parametric interactions (OPI) is developed. Coherent state as an
initial condition is applied to OPI systems and we have shown that our proposed
approach is very suitable for computer simulation of this kind. In this paper
we have discussed d model properties and also we have presented the time development
of phenomenon in Schrödinger picture as well as the derivation of squeezed
properties for combined fields.
29- Phase conjugational
quarter wave reflectors
Abstract:
A. Adibi H. Kaatuzian A. Rostami ICT'96
13-17 April, 1996, Istanbul Turkey In this paper we have proposed a new method
for the calculation of Reflectivity in nonlinear optical phenomenon called
Phase Conjugation by Stimulated Brillion Scattering (SBS) which has been
developed for Benzene Cell in a form of Quarter-Wave multilayer segments. In
this work, we have proposed generalized form of periodic structures for the
refractive index in terms of space and time (dynamic periodic structures). This
model delivers the precise knowledge for understanding phase conjugation
phenomenon based on physical point of view. These calculations have been carried
out at the wavelength of 6943 Å.
30- Software lab for semiconductor
device characterization
Abstract:
Akbar Adibi A. Rostami 5th IEEE
International Conference on Electronics Circuits and Systems, ICECS-98, Lisbon
We have developed a software system for training physical; and electrical
concept of semiconductor devices and named it 'SLSD' (Software Lab
Semiconductor Devices). This work has been done based on two following points:
(i) usage of new formulas for finite differentiation. (ii) usage of a matrix
form for differentiation operators in different equations By virtue of these,
we are able to organize the software system as a software lab that is several
small discrete programs that can be jointed by students together in a desired
fashion to perform desired simulations. The two main transport models, which
are classical models based on Shockley-Red equations and semiclassical model
based on Boltzmann equation as well as Schrödinger equation solver and the Laplace
solver, has been installed in this lab. One can perform many different
experiments in this lab. These experiments cover a wide range of interesting
matters in the field of semiconductor devices. We explain six topic experiments
in this paper briefly.
31- Organic quantum film
optical switch
Abstract:
Organic quantum film optical switch IEEE
Telecommunication Conference, Bali Indonesia, April 3-5,
1995.
32- Solution of quantized
optical parametric interactions Hamiltonian
Abstract:
Jafarizadeh, M.A., Adibi, A., Rostami, A IL
Nouve Cimento part D Volume 20 No. 1, 1998.
33- Dependence of nonclassical
behavior of OPI Hamiltonian on the strength of coherence of initial light
Abstract:
M. A. Jafarizadeh, A. Adibi and A. Rostami
Indian journal of physics part B Vol. 79, No. 6, December 1989. P. 643
nonclassical properties of optical parametric interaction Hamiltonian (OPI),
such as appearance of squeezed states, have been investigated via density
matrix formation where the partially coherent lights with Laguerre or Laser
distributions have been chosen as initial states. It is shown that the
nonclassical behavior of light drastically depends on strength of coherence of
initial lights.
34- A New method for quantum
device simulation
Abstract:
Akbar Adibi M.J. Sharifi International
Journal of Electronics (49), January
17th 1999 This paper introduces a
few method for simulation of quantum semiconductor devices. These devices are
open systems. We have changed boundary conditions of Schrödinger equation in
these devices into two different equations and then introduced a numerical
method for solving the equation in a full matrix form. We have applied the
method for solving a resonant tunneling diode as an example and introduced
several abilities of the method including varying effective mass simulation,
complex eigenvalues determination, phase times and dwell times
calculation.
35- Photonic Treatment, An
Authentic concept
Abstract:
ADIBI, A. & KAATUZIAN, H
Optoelectronic-Devices Technologies Vol. 10, No. 3 Japan, September 1995.
36- Generalized model for GaAs
MESFET Photodetectors
Abstract:
A. Adibi K. Eshraghian IEEE Proceedings,
Circuits, Devices and Systems, Vol. 136, Part G, No. 6, December 1989 The
gallium-arsenide MESFET as a ps light-pulse detector has created an environment
whereby it is now possible to interface optical fibers and high-speed GaAs
analogue-digital circuitry in optical communication links. High switching speed
and low operating voltage, together with the optoisolation characteristics of
GaAs MESFETs, have resulted in considerable research into uncovering some of
the principles that govern the optical characteristics of the GaAs D-MESFET as
a photodetector. During the last few years various mechanisms for the
photoresponse of MESFETs have been proposed. There include: (i) photoconductivity
via the MESFET channel (ii) consideration of the MESFET as a photodiode having
only the photovoltaic effect (iii) direct optically induced modulation of the
depletion layer, which in essence affects the channel current (iv) electrical modulation
of the depletion layer caused by optically generated carriers. Thus there
remains considerable controversy with regard to the model of operation of the
MESFET as an optical detector. In the paper an effort made to explain the
various experimental conditions that resulted in the different conclusions, and
subsequently a more complete model is proposed which describes the various
modes of operation and provides the basis for comparison between the various proposals
.
BOOKS
- Theory & Technology of Semiconductor Devices
- Digital Electronics
- Pulse Techniques
1- Theory &
Technology of Semiconductor Devices
Abstract:
1995 Amirkabir University of Technology Tehran
Iran.
2- Digital Electronics
Abstract:
It was reviewed & corrected by me in
1992, Academic publication center Tehran Iran.
3- Pulse Techniques
Abstract:
1987 Amirkabir University of technology,
Tehran Iran